Industry News

AI Future: Samsung Begins 9th Gen QLC Flash Mass Production

2024-12-06 11:27:57 jnadm

9th Generation V-NAND Technology: Samsung Leads the Industry into a New Era

        Seoul, South Korea, September 12, 2024 – Samsung Electronics Co., Ltd., a leading global supplier of advanced memory technology, announced that it has begun mass production of its single-terabit (Tb) quad-level cell (QLC) 9th Generation Vertical NAND (V-NAND). This is another major development following the first mass production of triple-level cell (TLC) 9th Generation V-NAND in April this year, marking Samsung’s continued leadership in the high-capacity, high-performance NAND flash memory market.

9th Generation QLC Flash Technology: Optimal Solutions for AI Applications

         Samsung’s 9th Generation QLC Flash Technology combines several breakthrough innovations, including industry-leading channel hole etching technology and dual stacking structure. These new technologies not only increase storage density, but also enhance data processing capabilities, making them ideal for supporting the needs of various AI applications. “We are pleased to have transitioned from TLC versions to successful mass production of 9th Generation QLC V-NAND in just four months, allowing us to offer a range of advanced SSD solutions to meet the needs of the AI era,” said SungHoi Hur, executive vice president and head of Flash Memory Products and Technology at Samsung Electronics.

9th Generation V-NAND Technology: Technological Innovation Drives Product Optimization

        Samsung’s 9th Generation V-NAND Technology uses unparalleled channel hole etching technology to achieve the industry’s highest number of layers, and further improves bit density through a dual-stacked structure. In addition, the design mold technology ensures the consistency of word line spacing, thereby optimizing the cell characteristics within and between each layer. With this technology, data retention performance has been improved by approximately 20% compared to previous generations, greatly enhancing product reliability.

9th Generation QLC Flash Technology: Improving Performance and Efficiency

        Using predictive programming technology, Samsung can more accurately control changes in unit state and reduce unnecessary operations, doubling the write performance of the 9th Generation QLC V-NAND and increasing data input/output speed by 60%. In addition, the application of low-power design technology reduces the energy consumption of data reading and writing by approximately 30% and 50% respectively, significantly improving overall energy efficiency.

9th Generation V-NAND Technology: Wide Application Prospects

         Samsung plans to apply this advanced 9th Generation QLC V-NAND to branded consumer products, and gradually expand to mobile universal flash storage (UFS), personal computers, and server SSDs to serve customers such as cloud service providers. As the demand for AI applications in the enterprise SSD market grows, Samsung will continue to consolidate its leading position in this field with its 9th Generation V-NAND technology.

        For international chip trading companies, it is crucial to keep up with such technological advances as they represent future market trends and technology development directions. Samsung's move heralds the arrival of a new era of more efficient and reliable data storage.

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