SK hynix launched the GDDR7 DRAM chip with 32Gbps speed, 50% better efficiency, and 74% lower thermal resistance, ideal for AI, HPC, and autonomous driving.
2024/10/11
SK Hynix introduces the world's first 16Gb DDR5 DRAM chip using 6th gen 10nm tech, boosting productivity by 30%, speed by 11%, and efficiency by 9%.
2024/10/10
SK Hynix launches 12L HBM3E DRAM mass production, setting new global benchmarks for speed, capacity, and stability, strengthening AI memory leadership.
2024/10/09
SAMSUNG announces 12nm DDR5 DRAM with 23% lower power, 20% higher efficiency, and 7.2Gbps speed. AMD-compatible, mass production starts in H2 2023.
2024/10/08
Samsung's HBM3E 12H 24GB DRAM chip, stacking 12 layers of 24Gb DRAM, offers 36GB total capacity, 9.8Gbps data rate, and 1,250GB/s bandwidth with optimized thermal and power efficiency.
2024/10/07
Dive into global electronics innovation, revolutionizing sports viewing: China's 8K debut at Paris Olympics, drone shows blending tech & art, smart cameras capturing every thrill. Explore tech's future in sports.
2024/08/09
Unleash electric vehicle innovation with NXP's S32K39 MCUs. High-performance, ASIL-D safety, TSN Ethernet, optimized for multi-motor control in efficient, cost-effective designs.
2024/07/07
Empower software-defined vehicles with NXP's automotive-grade S32N55 microprocessor. 16 lock-step Arm Cortex-R52 cores for high-performance, safe, and integrated control solutions.
2024/07/06
