News

Samsung Launches First 8th Generation V-NAND Technology Automotive SSD

Samsung launches AM9C1, an 8th-gen V-NAND PCIe 4.0 automotive SSD, with 4,400MB/s read speeds for autonomous vehicles.

2024/12/06

AI Future: Samsung Begins 9th Gen QLC Flash Mass Production

Samsung starts mass production of its 9th-gen V-NAND QLC flash, featuring advanced technologies for higher density, faster speeds, and lower power use, to meet growing AI demands.

2024/12/06

意法半导体推出新一代智能电表通信方案，加速能源行业转型

意法半导体的ST85MM PLC调制解调器，支持Meters and More及PRIME 1.4标准，提升智能电表灵活性与安全性，推动能源行业数字化。现已上市。

2024/10/25

意法半导体发布ST87M01-双无线IoT模块：优化表计与资产管理

意法半导体的ST87M01模块集成Vodafone eSIM和NB-IoT/wM-BUS，专为智能表计和资产管理优化，提供安全、灵活的全球连接方案。

2024/10/22

三星为下一代 AI 计算开发业界首款 24Gb GDDR7 DRAM

三星电子发布业界首款24Gb GDDR7 DRAM芯片，速度超过40Gbps，适用于数据中心和AI工作站。采用第五代10纳米工艺和PAM3技术，提升性能与能效。该芯片将于今年开始验证，明年初量产。

2024/10/18

SK hynix GDDR7 DRAM Chip: New Benchmark in Speed

SK hynix launched the GDDR7 DRAM chip with 32Gbps speed, 50% better efficiency, and 74% lower thermal resistance, ideal for AI, HPC, and autonomous driving.

2024/10/11

SK Hynix Unveils 6th Gen 10nm DDR5 DRAM

SK Hynix introduces the world's first 16Gb DDR5 DRAM chip using 6th gen 10nm tech, boosting productivity by 30%, speed by 11%, and efficiency by 9%.

2024/10/10

Mass Production of SK Hynix HBM3E DRAM Chips

SK Hynix launches 12L HBM3E DRAM mass production, setting new global benchmarks for speed, capacity, and stability, strengthening AI memory leadership.

2024/10/09