MRF8P9300HSR6是一款高性能射频功率MOSFET，适用于1 GHz至6 GHz的频率范围，最大输出功率为20 W，适用于无线通信、卫星通信和军事雷达系统等应用。
The MRF8S9220HS is a high-performance RF power MOSFET, ideal for 1-6 GHz applications with a max output of 20 W. Perfect for wireless, satellite comms, and military radar systems.
UJ3C120040K3S, an N-channel E-mode SiC MOSFET(MOS Tube) for high-voltage applications, boasts 1200V rating, 35mΩ RDS(on), and rapid switching under positive gate-source voltage.
The JCS740F is a 400V/10A N-channel MOSFET with low Rds(on), ideal for power conversion, motor drives, and inverters, enhancing system efficiency and reliability.
Discover the exceptional features & applications of 2SC5200 NPN power transistors in automotive electronics, industrial control, and audio amplification. Optimized design for various power needs.
The 20N60A4 is a high-performance N-Channel IGBT transistor rated at 600V/20A. Ideal for inverters, motor control, and power conversion, offering outstanding power efficiency and reliability.
The 2SC5200 is a premium NPN power transistor supporting up to 15A and 230V, ideal for audio amplifiers, motor drives, and power modules with low saturation voltage.
The NTD2955T4G is an ON Semiconductor P-channel MOSFET, rated at -60V, -12A, 3.75W, with temp range -55°C to 175°C. It features a TO-252-3 (DPak) package with a tab for heatsinking, supplied in tubes.
