MRF8P9300HSR6是一款高性能射频功率MOSFET,适用于1 GHz至6 GHz的频率范围,最大输出功率为20 W,适用于无线通信、卫星通信和军事雷达系统等应用。
The MRF8S9220HS is a high-performance RF power MOSFET, ideal for 1-6 GHz applications with a max output of 20 W. Perfect for wireless, satellite comms, and military radar systems.
UJ3C120040K3S, an N-channel E-mode SiC MOSFET(MOS Tube) for high-voltage applications, boasts 1200V rating, 35mΩ RDS(on), and rapid switching under positive gate-source voltage.
The JCS740F is a 400V/10A N-channel MOSFET with low Rds(on), ideal for power conversion, motor drives, and inverters, enhancing system efficiency and reliability.
The NTD2955T4G is an ON Semiconductor P-channel MOSFET, rated at -60V, -12A, 3.75W, with temp range -55°C to 175°C. It features a TO-252-3 (DPak) package with a tab for heatsinking, supplied in tubes.
FS16SM-N-channel MOSFET, the working voltage is up to 500V, the maximum drain current is 16A, and it is packaged in TO-3P. Original authentic, order now, fast delivery.
ST /LD1086DT50TR-MOS tube, 100% brand new and original, fast online order. Low MOQ, price match guaranteed.
FDB12N50F is a power MOSFET produced by onsemi company. It has high withstand voltage capability and high temperature stability. It is suitable for switching mode power supply, lighting control and other fields.