SAMSUNG Elec. Begins Volume Production Of 9th-Gen V-Nand, Increasing Storage By 50%, Driving High-Perf. Ssd Innovation.

SAMSUNG Electronics Announces Mass Production of 9th Generation V-NAND

         On April 23, Samsung Electronics, a global pioneer in memory technology, officially announced that its innovative 1 terabit (Tb) triple-level cell (TLC) 9th generation vertical NAND (V-NAND) has entered mass production, further consolidating its leading position in the NAND flash memory market. This milestone achievement not only demonstrates Samsung's continued breakthroughs in advanced storage solutions, but also lays a solid foundation for the rapid development of future technology applications.

A New Leap In Storage Technology, Strengthening Market Leadership

          "We are proud to launch the world's first ninth-generation V-NAND, which heralds a new leap in storage technology applications. Faced with the evolving needs of NAND flash memory solutions, Samsung continues to challenge the limits of cell architecture and operating schemes to meet market expectations for next-generation AI storage solutions."

Bit Density Increased By 50%, Size And Mold Innovation

        The ninth-generation V-NAND flash memory chip released this time has achieved an industry-leading increase in bit density, an increase of about 50% over the previous generation, thanks to its use of the world's smallest cell size and thinnest die design. Samsung's unremitting efforts in technological innovation, such as the application of technologies that effectively avoid cell interference and extend cell life, and the design of significantly reducing the plane area of memory cells by removing virtual channel holes, have jointly ensured the excellent quality and reliability of the product.

Dual Stack Structure And Efficient Etching Process

         It is worth mentioning that Samsung has achieved an unprecedented number of cell layers in the dual stack structure using its breakthrough "channel hole etching" technology, greatly improving production efficiency. This process not only demonstrates Samsung's deep accumulation in the field of semiconductor manufacturing, but also paves the way for subsequent higher-layer unit stacking, highlighting the necessity of complex etching technology.

Toggle 5.1 Speeds Up 33%, Pcie 5.0 Is In Sight

        In addition, the ninth-generation V-NAND is equipped with the latest generation of NAND flash memory interface "Toggle 5.1", with a 33% increase in data input/output speed to 3.2 gigabits per second (Gbps), and plans to increase support for PCIe 5.0 to further consolidate its dominance in the high-performance SSD market. At the same time, thanks to the optimization of low-power design, the new product has reduced energy consumption by 10% compared with the previous generation, actively responding to the market's urgent need for energy conservation and emission reduction, and providing an ideal choice for green computing.

TLC Model Has Been Put Into Production, Qlc Is Following Closely

        Samsung has currently started mass production of 1Tb TLC type ninth-generation V-NAND flash memory chip, and is expected to continue to launch the quad-level cell (QLC) version in the second half of this year, comprehensively promoting the storage field into a new era of high performance and high density.

         As a third-party chip international trader dedicated to tracking and sharing the latest developments in the global chip industry, we highly value and affirm Samsung Electronics' innovative breakthroughs this time, and believe that this will have a far-reaching impact on the entire storage industry and open a new chapter in data storage technology.