Other Transistor

20N60A4: N-Channel IGBT, Power Efficiency Solution

The 20N60A4 is a high-performance N-Channel IGBT transistor rated at 600V/20A. Ideal for inverters, motor control, and power conversion, offering outstanding power efficiency and reliability.

  • Model: 20N60A4
  • Type: N-channel IGBT Transistor
  • Voltage: 600V
  • Electric current: 20A
  • Power: 290W
  • Operating temperature: -40°C~+150°C
  • Package/Case: TO-220
  • Brand: Infineon

20N60A4 Product Description

         20N60A4 is an N-channel IGBT Transistor, which is an industry-leading power management solution and has emerged in many fields with its excellent performance and reliability. The device has a breakdown voltage of 600V and a continuous current carrying capacity of up to 20A. It is compact and uses a standard TO-220 package, which is easy to integrate into various circuits. 20N60A4 has the characteristics of fast switching speed and low saturation voltage, which enables it to show excellent efficiency in high-frequency and high-power applications.

20N60A4 Product Features

        1. High voltage capability:20N60A4 N-channel IGBT transistor is designed to withstand collector-emitter breakdown voltage (Vceo) up to 600V, making it suitable for high voltage power electronics applications.

        2. High current handling:The device can handle up to 20A of continuous current (Ic) and can withstand higher peak currents in short pulses, ensuring reliable performance under high load conditions.

        3. Low saturation voltage:Even under high current conditions, the 20N60A4 can maintain a low saturation voltage (Vce(sat)), which means lower power losses in the on state, improving the overall efficiency of the system.

        4. Fast switching characteristics:Thanks to its IGBT structure, the 20N60A4 has a fast switching speed, which helps reduce switching losses and increase switching frequency, thereby improving the performance of power electronic equipment.

        5. High temperature stability:The IGBT is able to operate over a wide temperature range, typically -40°C to +150°C, ensuring reliability and durability in harsh environments.

        6. Easy to drive:20N60A4 has a high gate input impedance, similar to MOSFET, which means it can be driven by a simple logic level signal, simplifying the design of the drive circuit.

        7. Standard package:Using the common TO-220 package, it is easy to install and dissipate heat, and is also compatible with other standard components.

        8. Wide application adaptability: 20N60A4 is suitable for a variety of power electronics applications, including but not limited to inverters, uninterruptible power supplies (UPS), motor drives, solar power generation systems, battery chargers and automotive electronics.

20N60A4 Product Application

         1. Inverter design optimization:In solar inverters, the 20N60A4 N-channel IGBT transistor is the core switching element, which can achieve a conversion efficiency of up to 98%. Its low conduction loss and fast switching characteristics ensure the stable operation of the system under different load conditions, while reducing energy loss and extending the life of the equipment.

        2. Improved motor drive efficiency:Applied to the motor control system of electric vehicles, the 20N60A4 N-channel IGBT transistor provides precise current control and fast response capabilities. During frequent start-stop and speed-changing operations, the IGBT ensures smooth operation of the motor, reduces electromagnetic interference, and improves driving experience and safety.

        3. UPS Uninterruptible Power Supply Improvement:In the uninterruptible power supply (UPS) system, the 20N60A4 N-channel IGBT transistor is a key power regulation component that can effectively cope with grid fluctuations and provide a stable output voltage. Its high reliability ensures continuous power supply in emergency situations and protects sensitive electronic equipment from damage.

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