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BC856AW-7-F-Single Bipolar Transistor

BC856AW-7-F-Single Bipolar Transistor

BC856AW-7-F is a PNP small signal transistor, suitable for communication, power supply, signal processing and other fields, with high performance and low power consumption.

  • Model： BC856AW-7-F
  • Type： Single Bipolar Transistor
  • Voltage： 65 V
  • Electric current： 100 mA
  • Power： 200 mW
  • Operating temperature： -65°C ~ 150°C
  • Package/Case： SC-70，SOT-323
  • Brand： Diodes Incorporated

BC856AW-7-F product description

         The BC856AW-7-F is a P unipolar transistor in a SOT323 package suitable for automatic insertion. It is complementary to NPN type transistors of BC846AW - BC848CW series. It has the following main parameters: collector-emitter voltage VCEO 65 V maximum, collector-base voltage VCBO 80 V, emitter-base voltage VEBO 5 V, collector-emitter saturation voltage 250 mV, the maximum DC collector current is 100 mA, the power dissipation is 200 mW, and the gain-bandwidth product fT is 200 MHz.

BC856AW-7-F product application

         1. Communication equipment: BC856AW-7-F can be applied to wireless transceivers, modems, amplifiers, etc.

         2. Power management: BC856AW-7-F can be applied to switching regulators, step-down converters, chargers, etc.

         3. Signal processing: BC856AW-7-F can be applied to analog-to-digital converters, digital-to-analog converters, filters, etc.


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