S34ML01G200TF100 Product Description
1. Storage type:Non-volatile memory.
2. Storage format:FLASH - NAND.
3. Storage size:1Gbit1.
4. Storage organization:128M x 8.
5. Interface:Parallel.
6. Write cycle time - word, page: 25ns.
7. Supply voltage:2.7V ~ 3.6V.
S34ML01G200TF100 Product Application
1. Consumer electronics:Due to its non-volatile nature, this memory is very suitable for small-sized portable products and battery-powered products device of.
2. Data communication equipment:This equipment can be widely used in data communication equipment that requires large amounts of data storage and fast data access.
3. Industrial automation equipment:In the field of industrial automation, this memory can provide stable and reliable data storage to meet various needs. Control and monitoring system requirements.