SAMSUNG announces 12nm DDR5 DRAM with 23% lower power, 20% higher efficiency, and 7.2Gbps speed. AMD-compatible, mass production starts in H2 2023.
2024/10/08
Samsung's HBM3E 12H 24GB DRAM chip, stacking 12 layers of 24Gb DRAM, offers 36GB total capacity, 9.8Gbps data rate, and 1,250GB/s bandwidth with optimized thermal and power efficiency.
2024/10/07
Dive into global electronics innovation, revolutionizing sports viewing: China's 8K debut at Paris Olympics, drone shows blending tech & art, smart cameras capturing every thrill. Explore tech's future in sports.
2024/08/09
Unleash electric vehicle innovation with NXP's S32K39 MCUs. High-performance, ASIL-D safety, TSN Ethernet, optimized for multi-motor control in efficient, cost-effective designs.
2024/07/07
Empower software-defined vehicles with NXP's automotive-grade S32N55 microprocessor. 16 lock-step Arm Cortex-R52 cores for high-performance, safe, and integrated control solutions.
2024/07/06
ST's ST54L NFC controller empowers secure mobile payments and digital wallets. With Thales security, enhanced NFC, 3.3MB memory, supports multi-services, eSIM on Google Pixel 8. Pioneering payment safety.
2024/07/05
Discover STMicro's TSB952 dual op-amp: 52MHz bandwidth, 3.3mA low power, rail-to-rail output, 4.5V-36V supply, -40°C to 125°C operation, 4kV ESD protection, in compact 3x3mm DFN8/SO8.
2024/07/04
ST VNF9Q20F, car-grade power switch, VIPower M0-9 MOSFET, STi2Fuse, smart fuse protection, SPI interface, voltage stability, circuit protection, diagnostics, fail-safe mode, 6mm x 6mm QFN package.
2024/07/03
