SK Hynix introduces the world's first 16Gb DDR5 DRAM chip using 6th gen 10nm tech, boosting productivity by 30%, speed by 11%, and efficiency by 9%.
2024/10/10
SK Hynix launches 12L HBM3E DRAM mass production, setting new global benchmarks for speed, capacity, and stability, strengthening AI memory leadership.
2024/10/09
SAMSUNG announces 12nm DDR5 DRAM with 23% lower power, 20% higher efficiency, and 7.2Gbps speed. AMD-compatible, mass production starts in H2 2023.
2024/10/08
Samsung's HBM3E 12H 24GB DRAM chip, stacking 12 layers of 24Gb DRAM, offers 36GB total capacity, 9.8Gbps data rate, and 1,250GB/s bandwidth with optimized thermal and power efficiency.
2024/10/07
Samsung AM9C1 is the industry's first automotive SSD featuring 8th Gen V-NAND tech. Delivers 4,400MB/s read speeds, AEC-Q100 Grade 2 certification, and PCIe 4.0 interface for autonomous driving and high-performance vehicle systems.
2024/09/26
Samsung starts mass production of its 9th-gen V-NAND QLC flash, featuring advanced technologies for higher density, faster speeds, and lower power use, to meet growing AI demands.
2024/09/16
Dive into global electronics innovation, revolutionizing sports viewing: China's 8K debut at Paris Olympics, drone shows blending tech & art, smart cameras capturing every thrill. Explore tech's future in sports.
2024/07/29
Unleash electric vehicle innovation with NXP's S32K39 MCUs. High-performance, ASIL-D safety, TSN Ethernet, optimized for multi-motor control in efficient, cost-effective designs.
2024/07/07
