Memory IC

SAMSUNG DDR5 K4RHE086VB-BCWM (24GB)DRAM IC

Discover the Samsung K4RHE086VB-BCWM 24GB DDR5 DRAM, a high-performance solution transforming data centers, premium PCs, and professional workstations.

  • Model: K4RHE086VB-BCWM
  • Type: DDR5 DRAM
  • Voltage: 1.1V
  • Electric current: /
  • Memory format: x16
  • Storage: 24GB
  • Operating temperature: 0°C ~ +70°C
  • Package/Case: BGA Package
  • Brand: SAMSUNG

DDR5 K4RHE086VB-BCWM Product Description

        SamsungK4RHE086VB-BCWM is a leadingDDR5 DRAM chip designed to meet modern computing needs design. The chip has 24GB of large-capacity storage space and operates at only 1.1V, significantly reducing system power consumption. The use of advanced BGA packaging technology ensures excellent heat dissipation performance and compact design. The supported temperature range is from 0°C to +70°C, making it suitable for various commercial environments. As aDDR5 DRAM chip, it not only provides faster data transfer rates, but also has higher bandwidth efficiency, making it an ideal choice for building next-generation servers, high-performance personal computers, and professional workstations.

DDR5 K4RHE086VB-BCWM Product Features

        1. High data transfer rate: Provides data transfer speeds up to 5600 Mbps, which is significantly improved compared to the previous generation DDR4. Ensures faster application response and data processing capabilities.

        2. Large-capacity storage:The capacity of a single chip reaches 24GB, which is suitable for high-performance computing scenarios that require large amounts of memory support, such as data centers, high-end workstations, etc.

        3. Low power consumption design:The operating voltage is only 1.1V, which is more energy-saving than the previous generation product and helps to reduce the overall system cost. power consumption and improve energy efficiency.

        4. Advanced packaging technology:Using FBGA (Fine-Pitch Ball Grid Array) packaging, which has better electrical performance and heat dissipation effect, while being compact in size, suitable for the miniaturization needs of modern equipment.

        5. Wide temperature operating range: Able to operate stably in the temperature range of 0°C to +70°C, adaptable to a variety of Business environment, including some of the more extreme working conditions.

        6. Built-in ECC function:Integrated error correction code (ECC) mechanism can automatically detect and correct single-bit errors in memory, Enhance data integrity and system reliability.

        7. Optimized power management: Supports multiple energy-saving modes, such as low-power standby in deep sleep state, and dynamic adjustment frequency to match actual load demand.

        8. Wide compatibility:Comply with JEDEC standards, easy to integrate with existing hardware platforms, and reserved for future technology upgrades space.

        9. Multi-channel architecture support:Supports multi-channel configuration to further improve bandwidth utilization through parallel data paths, especially suitable for throughput Extremely demanding applications.

        10. Long-term supply security:As one of the world's leading semiconductor manufacturers, Samsung is committed to providing its customers with continuous product supply and Technical support ensures that users can benefit from its technological innovations in the long term.

DDR5 K4RHE086VB-BCWM Product Application

        1. Data center optimization: As the demand for cloud computing services continues to grow, data centers are facing unprecedented challenges. SamsungDDR5K4RHE086VB-BCWM DRAM chipWith its excellent performance specifications, it is an ideal choice when upgrading existing infrastructure or building new facilities. One of the ideal choices. It can greatly improve the efficiency of communication between server clusters and, due to its excellent energy efficiency ratio, can effectively reduce the power expenses of the entire facility.

        2. High-end gaming platform: For game enthusiasts who pursue the ultimate experience, fast loading time and smooth graphics performance are crucial important. Gaming consoles built with thisDDR5K4RHE086VB-BCWM DRAM chipare capable of loading large game files at blazing speeds with guaranteed It remains in optimal condition under long-term high-load operation. In addition, its large capacity also means that users can open multiple applications at the same time without affecting game performance, greatly enriching players' gaming experience.

        3. Scientific research and engineering simulation:The scientific research field often needs to process massive data sets, especially when conducting complex simulation experiments . For example, in scenarios such as climate model prediction or biomedical imaging, it is particularly important to have a large enough memory space and fast data access capabilities. SamsungDDR5 K4RHE086VB-BCWM DRAM chip It is designed to meet these challenges. Not only does it provide sufficient storage resources to accommodate huge data collections, but its efficient read and write mechanism also helps speed up the data analysis process, allowing researchers to obtain results faster and advance projects.

label: DRAM IC
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