Memory IC

SAMSUNG HBM3 Icebolt: KHBAC4A03D-MC1H (24GB) DRAM IC

Discover the exceptional performance of Samsung KHBAC4A03D-MC1H HBM3 Icebolt-24GB, designed for high-performance computing and data centers. Offers fast data transfer, low latency, and high energy efficiency, ideal for various applications.

  • Model: KHBAC4A03D-MC1H
  • Type: HBM3 DRAM
  • Voltage: 1.2V
  • Electric current: /
  • Memory format: Stacked Multi-Layer DRAM (TSV Technology)
  • Storage: 24GB
  • Operating temperature: -40°C ~ +85°C
  • Package/Case: BGA Package
  • Brand: SAMSUNG

HBM3: KHBAC4A03D-MC1H Product Description   

         Samsung's HBM3 Icebolt KHBAC4A03D-MC1H is a high-performance, high-bandwidth memory third-generation product designed to meet the needs of modern high-performance computing (HPC), artificial intelligence (AI) and data centers. The "Icebolt" as a marketing code name highlights its extremely fast speed and excellent heat dissipation performance. This memory uses advanced HBM3 technology, provides up to 24GB storage capacity, supports 6.4 Gbps data transfer rate, total bandwidth up to 819 GB/s, and achieves high bandwidth and low power consumption by stacking multiple DRAM chips and connecting them through silicon via (TSV) technology. The compact design makes HBM3: KHBAC4A03D-MC1H easy to integrate into GPUs, CPUs and other high-performance processors, which not only promotes efficient system integration but also optimizes thermal management, making it an ideal choice for accelerating complex scientific computing, large-scale data analysis and deep learning model training.

HBM3: KHBAC4A03D-MC1H Product Features

        1. Ultra-high bandwidth:Supports up to 819 GB/s of total bandwidth, significantly improving data processing speed.

        2. Low latency:Optimized data path design achieves extremely low access latency and improves overall system response time.

        3. High energy efficiency:Adopt advanced process technology and low power design to reduce energy consumption and improve energy efficiency ratio.

         4. High-density storage:24GB storage capacity, combined with multi-stack architecture, provides high-density data storage solutions.

         5. Strong compatibility:Compatible with a variety of high-performance processors and platforms, easy to integrate into existing systems.

        6. High reliability:Through rigorous testing and verification, long-term stable operation is ensured, suitable for mission-critical environments.

HBM3: KHBAC4A03D-MC1H Product Application

        1. High-performance computing (HPC):In the field of high-performance computing, the application of HBM3:KHBAC4A03D-MC1H is particularly prominent. For example, at a large meteorological research center, researchers need to process massive amounts of meteorological data for climate simulation and prediction. Traditional memory solutions cannot meet such high data throughput requirements. By introducing HBM3: KHBAC4A03D-MC1H, the center was able to significantly improve data processing speed and computing efficiency. Researchers reported that after using HBM3: KHBAC4A03D-MC1H, the execution time of simulation tasks was reduced by nearly 50%, enabling accurate climate prediction results to be generated faster. This not only improves research efficiency, but also provides timely information support for decision makers. In addition, the low power consumption characteristics of HBM3: KHBAC4A03D-MC1H also helped the center reduce energy costs and improve overall operational efficiency.

        2. Data Center and Cloud Computing: HBM3:KHBAC4A03D-MC1H also demonstrates strong performance advantages in data center and cloud computing environments. A leading global data center provider has integrated HBM3: KHBAC4A03D-MC1H into its latest server platform. These servers are mainly used to handle large-scale data analysis and machine learning tasks. Due to the ultra-high bandwidth and low latency provided by HBM3: KHBAC4A03D-MC1H, data processing speed has been greatly improved. In addition, its high energy efficiency has also helped data centers significantly reduce operating costs. After actual testing, the overall performance of the data center has been improved by about 30%, while energy consumption has been reduced by 20%. This improvement not only improves service quality and customer satisfaction, but also brings considerable economic benefits to the enterprise. The high reliability and stability of HBM3: KHBAC4A03D-MC1H also ensures the continuous operation of the data center, reducing downtime and maintenance costs.

        3. Artificial Intelligence (AI) Training: The application of HBM3: KHBAC4A03D-MC1H in the field of artificial intelligence (AI) training is also impressive. A startup company focusing on autonomous driving technology is developing highly complex neural network models to achieve safer and smarter autonomous driving functions. These models require a lot of computing resources and high-speed memory to process huge training data sets. By using HBM3: KHBAC4A03D-MC1H, the company significantly accelerated the model training process. Specifically, the high bandwidth and low latency characteristics of HBM3: KHBAC4A03D-MC1H greatly increased the speed of data loading and processing, thereby significantly shortening the training time. In addition, its high-density storage capacity also allows the company to store more training data on a single node, further improving training efficiency. In the end, the company successfully developed an autonomous driving system with excellent performance and gained wide recognition in the market. The high energy efficiency and low power consumption characteristics of HBM3: KHBAC4A03D-MC1H also helped the company reduce operating costs and improve overall competitiveness.

label: DRAM IC
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