UJ3C120040K3S, an N-channel E-mode SiC MOSFET(MOS Tube) for high-voltage applications, boasts 1200V rating, 35mΩ RDS(on), and rapid switching under positive gate-source voltage.
UJ3C120040K3S Product Description
UJ3C120040K3S is an N-channel enhancement mode SiC MOSFET (MOS Tube) based on silicon carbide (SiC) technology, which turns on when a positive voltage relative to the source is applied to the gate, and turns off at zero or negative voltage. With its 1200V rated voltage and low on-resistance (RDS(on)) of 35mΩ, this MOSFET is designed for high-voltage, high-frequency and high-efficiency power electronics applications, such as high-voltage switching scenarios. Utilizing advanced SiC materials, the UJ3C120040K3S exhibits excellent thermal stability and durability, while achieving extremely low switching losses and fast switching speeds, effectively improving the efficiency and reliability of the entire system.
UJ3C120040K3S Product Features
1. High voltage capability: The UJ3C120040K3S has a rated voltage of up to 1200 volts, making it suitable for high voltage applications that require high withstand voltage capability.
2. Low on-resistance:RDS(on) (drain-source on-resistance) is only 35 milliohms, which means that in the on state, the device's own resistance is very small, thereby reducing power loss and improving system efficiency.
3. Third-generation SiC technology:Qorvo's third-generation SiC JFET technology is used to provide better electrical performance, including faster switching speeds and lower switching losses.
4. Common source and common gate structure:This unique circuit configuration can reduce gate charge and switching time, thereby improving efficiency and reducing electromagnetic interference (EMI).
5. High operating temperature:The maximum value of Tj is 175°C, indicating that the transistor can work stably in high temperature environment, suitable for demanding industrial and automotive applications.
6.Automotive-grade qualification:This device has automotive-grade certification, indicating that it is reliable and can meet the stringent standards of the automotive industry.
7.TO-247-3L package:This package provides good heat dissipation performance and is suitable for high current and high power applications.
8. Standard gate drive compatibility: The design of the UJ3C120040K3S allows the use of standard gate drive circuits, simplifying the design process and reducing system complexity.
UJ3C120040K3S Product Applications
1.New Energy Vehicle Charging Station:In the DC fast charging module of the new energy vehicle charging station, the high voltage capability and low on-resistance of the UJ3C120040K3S make the charging process more efficient and stable. The characteristics of SiC FET reduce energy loss, extend the service life of the charging station, and also reduce operating costs. Its excellent temperature stability ensures consistent performance under various environmental conditions.
2. Industrial motor drive system: The application of UJ3C120040K3S in industrial motor drive systems significantly improves control accuracy and response speed. The high-speed switching characteristics of this transistor allow precise adjustment of motor speed, thereby achieving more efficient energy utilization. In addition, its high power density makes the drive system more compact and easy to integrate into existing equipment, saving space while enhancing the overall performance of the system.
3. Solar PV Inverter:In the solar PV inverter, the low switching loss and high efficiency characteristics of the UJ3C120040K3S enable the inverter to maintain a stable output over a wide operating range. The use of SiC FETs improves the inverter's conversion efficiency and reduces the complexity of thermal management, thereby reducing maintenance costs. This not only helps to improve the overall economic benefits of the solar energy system, but also promotes the popularization of clean energy.