Mass Production of SK Hynix HBM3E DRAM Chips
HBM3E DRAM Chip: SK Hynix's Innovation Journey
SK Hynix emphasized that since the world's first launch of the first generation of HBM (HBM1) in 2013, the company has been the only company to develop and supply a full range of HBM products to the market. From the first generation of HBM to the fifth generation of HBM (HBM3E), SK Hynix has always been at the forefront of technological innovation.
12-layer HBM3E DRAM chip: industry-leading technological breakthrough
SK Hynix once again leads the industry by successfully mass-producing 12-layer stacked HBM3E DRAM chips. This achievement not only meets the growing needs of artificial intelligence companies, but also further consolidates SK Hynix's leadership in the memory market for AI. This 12-layer HBM3E DRAM chip reaches the world's highest level in all aspects such as speed, capacity and stability.
HBM3E DRAM Chip: Superior Performance and Speed
SK Hynix has increased the operating speed of this new product to the highest speed of existing memory, 9.6Gbps. When running the large language model (LLM) "Llama 3 70B" on a single GPU equipped with four HBM3E DRAM chips, 70 billion overall parameters can be read 35 times per second. Llama 3 is an open source large language model launched by Meta in April 2024, providing three sizes of 8B (billion), 70B, and 400B.
12-layer HBM3E DRAM Chip: Higher Capacity With Same Thickness
SK Hynix achieved the same thickness as the existing 8-layer product by stacking 12 3GB DRAM chips, while increasing capacity by 50%. To achieve this goal, the company made a single DRAM chip 40% thinner than before and stacked them vertically using through-silicon via technology (TSV). This technology punches thousands of microscopic holes in the DRAM chip, making it vertically interconnected to the electrodes, thus achieving advanced packaging.
HBM3E DRAM Chip: Advanced Process Ensures Stability and Reliability
In addition, SK Hynix has solved the structural problems that arise when stacking more thinner chips. The company applied its core technology, the advanced MR-MUF (mass reflow bottom mold filling) process, to this product. This technology not only improves heat dissipation performance by 10% compared to the previous generation, but also enhances control of warpage problems, thereby ensuring stability and reliability. In particular, SK Hynix's advanced MR-MUF technology reduces the pressure applied when chips are stacked and improves the chip's warpage control, which is the key to ensuring stable mass production of HBM.
HBM3E DRAM Chip: Meeting the Challenges of the AI Era
“We have once again broken through the technological barriers and proved our unique dominance in the memory market for AI,” said Kim Joo-sun, President of AI Infra at SK Hynix. “To meet the challenges of the AI era, we will steadily prepare next-generation memory products to consolidate our position as the ‘world’s top memory supplier for AI.’”
As a company focused on international chip trade, we are very excited about SK Hynix’s breakthrough in the 12-layer HBM3E DRAM chip field. This innovation not only demonstrates SK Hynix's leading position in high-performance memory technology, but also provides more powerful solutions for global customers and promotes the progress of the entire industry. We will continue to pay close attention to the technological innovation of SK Hynix and its partners around the world, and are committed to providing customers with the latest high-performance memory solutions.